HCG65200DAA

Overview

-55℃~+150℃ 0.4pF 1.6V 10A 160mΩ 2.3nC 27pF 650V 75W 83pF E-mode DFN-8(8x8) GaN Transistors(GaN HEMT) ROHS

Manufacturer: HXY MOSFET
Type: bipolar_transistor
Package: DFN-8(8x8)

Specs & ordering code

Rohs: true
Package: DFN 8
Voltage: 1.6 V
Resistance: 160 mohm

Datasheet